Publication Type Academic Article
Authors Köstler B, Jungwirth F, Achenbach L, Sistani M, Bolte M, Lerner H, Albert P, Wagner M, Barth S
Journal Inorg Chem
Volume 61
Issue 43
Pagination 17248-17255
Date Published 10/19/2022
ISSN 1520-510X
Abstract A series of new mixed-substituted heteronuclear precursors with preformed Si-Ge bonds has been synthesized via a two-step synthesis protocol. The molecular sources combine convenient handling with sufficient thermal lability to provide access to group IV alloys with low carbon content. Differences in the molecule-material conversion by chemical vapor deposition (CVD) techniques are described and traced back to the molecular design. This study illustrates the possibility of tailoring the physical and chemical properties of single-source precursors for their application in the CVD of Si1-xGex coatings. Moreover, partial crystallization of the Si1-xGex has been achieved by Ga metal-supported CVD growth, which demonstrated the potential of the presented precursor class for the synthesis of crystalline group IV alloys.
DOI 10.1021/acs.inorgchem.2c02835
PubMed ID 36260357
PubMed Central ID PMC9627566
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